Fabrication and Analysis of Novel Poly-Si Nanowire Non-Volatile Memory Devices
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this dissertation, simple and low-cost self-aligned processes are proposed to fabricate high-performance polycrystalline silicon (poly-Si) nanowire (NW) field-effect transistors (FETs) and non-volatile memory (NVM) devices. Poly-Si NW devices with sub-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56246598329572707973 |