Modeling the Switching Magnitude of Random Telegraph Signals in Subthreshold Nanoscale MOSFETs
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === With the technology generation down-scaling trend of metal-oxide-semiconductor field effect transistors (MOSFETs), random telegraph signals (RTS) turn into an essential issue in device development. These signals take place through the carrier capture-emissi...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/34889201893875831058 |