Statistical Study and Rapid Prediction Methodology of RRAM SET Speed-Disturb Dilemma
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Resistive-switching random access memory (RRAM) has the potential to become the front runner for future nonvolatile memory because of its simple structure, low operating voltage, and excellent scalability. To fulfill the requirement of nonvolatile memory ap...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47197877804646972569 |