The Study of Contact Metals for High Power AlGaN/GaN High Electron Mobility Transistors Application
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === GaN has high electron mobility, high carrier concentration and high breakdown field. These advantages make GaN suitable for high power and high frequency applications. However, the cost of GaN device processing is too high to compete with traditional Si-bas...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97170220583223179151 |