A Study on the Defect in SiC by Deep Level Transient Spectroscopy (DLTS) and Design Analysis of the SiC Trench Junction Schottky Barrier (TJBS) Diode
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Silicon carbide (SiC) is an ideal semiconductor material for the higher power and high temperature applications due to its wide bandgap, high critical electric field, and good thermal conductivity. For high breakdown voltage device, the quality of the n- ep...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/q8gn9y |