Physics, device operation, and circuit application of multi-gate junctionless metal-oxide-semiconductor field-effect-transistors
博士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === In this work, we comprehensively study the physics, device operation, and applications of the multi-gate junctionless (JL) metal-oxide-semiconductor field- effect-transistor (MOSFET). In the first part of this work, we discuss the physics difference between...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19072374204401546242 |