Effects of Composition on Electrical Properties of Amorphous In-Ga-Zn-O Films Deposited Using Atmospheric Pressure Plasma Jet and Post Laser Annealing
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Silicon dioxide (SiO2) has been gate dielectric because of its physical and electrical properties on silicon substrate. But gate leakage current becomes higher when shrinking of the gate length and gate dielectric thickness. Using high dielectric constan...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/25393871774700912508 |