Thick GaN layers prepared on AlN/Patterned Sapphire Substrate by Hydride Vapor Phase epitaxy
碩士 === 國立交通大學 === 照明與能源光電研究所 === 102 === In this thesis, we used a horizontal home-made hydride vapor phase epitaxy (HVPE) to grow thick GaN layers on a sputtered AlN/patterned sapphire substrate. We initially optimized surface morphology and crystal quality by changing the V-III ratio to acquire a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67005552067824899359 |