Small-Signal and Large-Signal Models of AlGaN/GaN HEMTs
碩士 === 國立交通大學 === 照明與能源光電研究所 === 102 === Nowadays, the power amplifiers (PAs) are required to have high linearity and high efficiency for the applications of mobile communication. To meet the requirements, GaN HEMTs become the most promising candidate as active devices in the systems, because it c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59010764803301956839 |