Study of GaAs nucleation on Si substrate by Metal-organic Chemical Vapor Deposition
碩士 === 國立交通大學 === 材料科學與工程學系所 === 102 === It was realized that a direct, high-temperature growth of GaAs on Si substrates led to a 3D initial growth morphology aided by the high rate of surface diffusion of the Ga and As adatoms. When those islands later coalesce, a high density of immobile and pinne...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12625455961431142673 |