Homoepitaxial growth of (111) diamond with embedded silicon-based quantum dots
碩士 === 國立交通大學 === 材料科學與工程學系所 === 102 === This thesis focuses on growth of (111) homoepitaxial diamond films with embedded silicon-based quantum dots (QDs) and analyses of related properties. The first part of this thesis deals with SiOx film deposited by magnetron sputtering, and the evolution of...
Main Authors: | Sung, Kuan-Ta, 宋冠達 |
---|---|
Other Authors: | Chang, Li |
Format: | Others |
Language: | zh-TW |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/82602167699972702435 |
Similar Items
-
Homoepitaxial growth of (111) diamond with embedded gold nanoparticles
by: Wu, Ping-Hsun, et al.
Published: (2011) -
Growth and Structural Characterization of Homoepitaxial Diamond Films on Ni-coated (111) Single Crystal Diamond Substrate
by: Chiu, Kun-An, et al.
Published: (2015) -
The study of silicon quantum dots in diamond
by: Chang, Pei-Ling, et al.
Published: (2015) -
Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth
by: Fernando Lloret, et al.
Published: (2018-10-01) -
Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond
by: Xiaotong Han, et al.
Published: (2020-10-01)