| Summary: | 碩士 === 國立交通大學 === 光電工程研究所 === 102 === In order to further reduce quantum dot (QD) separation, we had proposed and successfully developed the gradient Si-rich oxide multilayer (GSRO-ML) structure for the super-high density Si QD thin films with larger carrier tunneling probability. In this study, we investigate the B-doping and QD size effects on the super-high density Si QD thin films by using a GSRO-ML structure. Under B-doping effect, the preserved high crystallinity of Si QDs and the slightly reduced Eg with increasing PB are observed, besides, the electrical and PV properties are enhanced with increasing PB from 0 to 25W due to the increased active B-doped atoms but degraded at the higher PB than 30 W due to the increased inactive B-doped atoms and the interfacial over-diffusion of B-doped atoms. The decreased VOC with increasing PB due to the interfacial over-diffusion is efficiently improved by inserting the lowly B-doped GSRO thin films as buffer layers. Under QD size effect, the red-shift effect is clearly confirmed in the absorption band edge and quantum efficiency response with increasing NL thickness. Therefore, our results had demonstrated the feasibility and great potential for the higher efficiency Si-based solar cells integrating Si QDs by using a GSRO-ML structure.
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