Boron Doping Effect on the Super-High Density Si Quantum Dot Thin Films
碩士 === 國立交通大學 === 光電工程研究所 === 102 === In order to further reduce quantum dot (QD) separation, we had proposed and successfully developed the gradient Si-rich oxide multilayer (GSRO-ML) structure for the super-high density Si QD thin films with larger carrier tunneling probability. In this study, we...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24717970097630577489 |