| Summary: | 博士 === 國立交通大學 === 光電工程研究所 === 102 === This paper is the study of hydrogenated amorphous silicon-based thin film by plasma-enhanced chemical vapor deposition system (PECVD). And supplemented Very high frequency plasma technology (VHF) for deposited silicon based thin film solar cells. Deposited thin film by used of forming plasma from constituent atoms gas by radio frequency. The activity of ion is very strong. That very easy to react can significantly reduce the processing time. And the substrate is to obtain high deposition rates of high quality film. The most important of PECVD technology industry in the commercial issue is how to make large-area uniform deposition of thin films. PECVD deposition technique is a very complex physical and chemical reactions. The gas input from using spray plate electrode reaction in reaction chamber. And the reaction electrode plate position, the electric field strength, fluid field, temperature field, vacuum, and the quality of the gas will affect the uniformity of deposition. However, silicon based thin film deposited generally requires a large area uniformity of ± 10% or less. If only from the electrodes on the hardware architecture and the design of the chamber to improve the uniformity is very spend time and money. There is also a lot of technical problems which improve uniformity by the machine hardware. The study of optimized uniformity from changing the gas flow, chamber pressure, and the electrode plate position. In addition to construct a PECVD uniformity for analysis thin film of amorphous silicon-based solar cells production. And analysis amorphous silicon germanium thin-film solar cells for the primary and secondary deposition reaction in reaction chamber by uniformity of measurement. Thereby increasing component optimization results and trying to find the optimal improve efficiency key of uniformity of large-area thin film.
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