A study of the impact of O2 flow on the electrical characteristics of IGZO-TFTs by x-ray reflection measurement
碩士 === 國立交通大學 === 電機學院電子與光電學程 === 102 === IGZO (Indium Gallium Zinc Oxide) panel is a promising candidate for advanced display in next generation mobile electronic devices. IGZO panel can potentially achieve significant improvement in resolution and energy efficiency as compared to conventional LCDs...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43103975379712960633 |
| Summary: | 碩士 === 國立交通大學 === 電機學院電子與光電學程 === 102 === IGZO (Indium Gallium Zinc Oxide) panel is a promising candidate for advanced display in next generation mobile electronic devices. IGZO panel can potentially achieve significant improvement in resolution and energy efficiency as compared to conventional LCDs. In order to realize IGZO-TFTs for future display technology, it is essential to better understand the effects of various process parameters during IGZO growth on its physical properties, as well as the correlation between IGZO film properties and the corresponding transistor electrical properties.
This present work studies the effects of oxygen flow and annealing temperature during IGZO deposition on the electrical device properties of IGZO-TFTs. X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) are utilized to characterize IGZO film grown under various process conditions. Correlation has been drawn between physical properties of IGZO film and the corresponding electrical properties to guide future optimization.
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