Investigation of AlGaN/GaN Metal-Insulator-Semiconductor Transistors Using Al2O3/SiO2 Dielectrics
碩士 === 國立交通大學 === 光電系統研究所 === 102 === Gallium nitride (GaN) is a promising material for high temperature and power electronic devices. Besides, AlGaN/GaN hetero-junction has high electron mobility because of the existence of two-dimensional electron gas(2DEG) with high concentration. Compared with A...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79646924157827562929 |