Fabrication of C-axis Oriented AlN Thin Film by Pulsed-DC Sputtering
碩士 === 國立暨南國際大學 === 電機工程學系 === 103 === This thesis was to investigate the fabrication of c-axis AlN thin film by pulsed-DC sputtering on the poly AlN substrate. The flattening layers to smoothen the surface of the AlN substrate were spun on the AlN substrate before following sputtering processes. The...
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| Format: | Others |
| Language: | zh-TW |
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2015
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87097143787043683627 |
| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 103 === This thesis was to investigate the fabrication of c-axis AlN thin film by pulsed-DC sputtering on the poly AlN substrate. The flattening layers to smoothen the surface of the AlN substrate were spun on the AlN substrate before following sputtering processes. The effects of the number of flattening layers , Ti/Pt layer and sputtering power were also studied. The result showed that the AlN films with 0.8 – 1.5 μm thickness had AlN(002) preferred orientation. The AlN film using 300W as sputtering power deposited on the AlN substrate with five of flattening layers which annealed with RTP had c-axis orientation. And the GaN nanorods were deposited by RF-MOMBE on the AlN buffer layers also had c-axis orientation. The result showed that higher c-axis orientation of AlN buffer layer improved the c-axis orientation of GaN nanorod. In conclusion, this thesis successfully fabricated the c-axis oriented AlN film and c-axis oriented GaN film on the cost-effective and better thermal dissipation of poly AlN substrate.
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