| Summary: | 碩士 === 國立成功大學 === 光電科學與工程學系 === 102 === In this study, the tantalum (Ta) was used to dope into the VOx films. The VOx films with various Ta-doped contents were fabricated by magnetron radio frequency (RF) co-sputtering system. The TCR values of Ta-V-O thin films were obtained by four point probe measurement with heating system. The chemical composition, crystallinity and chemical bonding of films were carried out by the Energy Dispersive Spectrometers (EDS), X-ray diffraction (XRD) and the X-ray photoelectron spectroscopy (XPS), respectively. It was found the optimal condition of Ta-V-O film with Ta concentration of 11.14 % and the TCR and resistivity of this film were 3.24 %K-1 and 9.27 Ω-cm at room temperature, respectively. The resulted were applied in the microbolometers as the sensing layer. Thermal conductance, thermal time constant and responsivity of device were calculated to be 5.67 × 10-10 W/K, 5.14 ms and 239 KV/W, respectively.
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