The Growth of Ga-related Semiconductors and their Application for photodetectors
博士 === 國立成功大學 === 微電子工程研究所 === 102 === The main goals of this dissertation are the growth of GaN, Ga2O3 and InGaN and the fabrication and analysis of photodetectors (PDs). First, we reported the growth of β-Ga2O3 cap layer by furnace oxidation of GaN epitaxial layer at high temperature in oxygen con...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59455172819536009089 |