Crystal Structure and Electrical Properties of La/Ge Based Apatite Ionic Conductors Doped with Si
碩士 === 國立成功大學 === 資源工程學系 === 102 === A series of silicon doped Lanthanum-Germanates apatite-type materials, La10Ge6-xSixO27 (x=0, 1.2, 2.4, 3.6, 4.8, 6) were prepared in an attempt to synthesize a single phase by solid-state method. Moreover, in order to observe the relationship between changes in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99273649831118217386 |