Study of non-volatile domain relaxation on mixed-phase BiFeO3
碩士 === 國立成功大學 === 物理學系 === 102 === Non-volatile memory is one of important device in integrated circuit. The spontaneous polarization and electrical doamain in ferroelectric material can be modulated by external electric field, which is the advantage for manufacturing the non-volatile memory. Howeve...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21763104491899552603 |