Oxidation Suppression of SOFC Metallic Interconnect using Conducting Oxide Protection Layer
碩士 === 國立成功大學 === 材料科學及工程學系 === 102 === Since oxide layer composed of Cr2O3 and MnCr2O4 with high resistance formed on surface of interconnect Crofer 22 H at SOFC operating temperature, it is necessary to deposit highly conductive oxide layer to reduce the oxidation rate of substrate. In this study,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/grzpmw |