Deposition of Gallium Nitride films as electron transport and hole blocking layer in OLED
碩士 === 國立成功大學 === 化學工程學系 === 102 === This article is about the research of Gallium Nitride(GaN) as electron injection and hole blocking layer in Organic Light Emitting Diode(OLED). The traditional material for electron injection and hole blocking layer is BCP, which Tg point is low. We want to use G...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76k2ax |