Design and Fabrication of In-Situ Monitoring Systemfor Epitaxial Growth Applications
碩士 === 中興大學 === 精密工程學系所 === 102 === The main goal of this research is to develop in-situ monitoring technology of GaN-based materials grown by metalorganic chemical vapor deposition (MOCVD) for epilayer stress measurement. Using this technique, we can understand the stress variation between the wafe...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2014
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Online Access: | http://ndltd.ncl.edu.tw/handle/53355096739517492806 |