Study on the performance of P-side up AlGaInP Red Light Emitting Diodes with Roughened Transparent Conductive Layer
碩士 === 國立中興大學 === 精密工程學系所 === 102 === High-brightness p-side up AlGaInP-based red (λp = 619 nm) light emitting diodes (LEDs) with AZO current spreading layer and ZnO nanorod arrays serving as a roughening layer at surface are presented in this study. The active layers of LED are epitaxially grow by...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88771185063047659609 |