Optimization of the etching parameters for photo alignment using experimental design

• Main Authors: Chan-Jung Chang, 張展榮
• Other Authors: Gou-Jen Wang
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/27661689516641187052

碩士 === 國立中興大學 === 機械工程學系所 === 102 === Semiconductor manufacturing process can be divided into five processes: filming, lithography, etching, diffusion, and chemical mechanical polishing. In this rapid technology changing era, a semiconductor device must accommodate more effective circuits in a space limited integrated circuit (IC). It is thus essential to keep reducing the line-width in IC circuits; therefore, the alignment between two successive layers in present semiconductor fabrication process becomes a crucial step. The alignment of the next layer process highly relies on the alignment marks of the previous layer. When the alignment marks is not precisely presented by the previous fabrication process so that the alignment marks can’t be accurately recognized by the recognition device, the reliability of the product largely degrades due to the misalignment of the lithographic process. This study investigated the dry-etching photoresist removal process after the lithography process in the 1 V structure to optimal the process parameters of the alignment marks fabrication. The Taguchi method was adopted for the experiment design using the etching duration, pressure in the etching chamber, and the flow rate of the inlet gas as the control variables. Experimental results demonstrated that the optimal parameter set obtained from the Taguchi experiment design could precisely indicate the alignment marks of the successive lithography process.