Study on the Measurement of the Seebeck Coefficient of Tungsten Silicide in CMOS Process

碩士 === 國立高雄應用科技大學 === 光電與通訊工程研究所 === 102 === The purpose of this study is focused on the measurement of the Seebeck coefficient of tungsten silicide fabricated by a TSMC 0.35μm 2P4M CMOS-MEMS process. A micro structure with two heaters was designed to achieve controllable junctions’ temperatures and...

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Bibliographic Details
Main Authors: Ti-Chun Yu, 游迪鈞
Other Authors: Chung-Nan Chen
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/98131808748822804146