A Study on picosecond laser technology on 3D IC TSV and Low-k wafer grooving

• Main Authors: Chen-Yi Wang, 王辰譯
• Other Authors: Hsiang-Chen Hsu
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/19538126640991168916

碩士 === 義守大學 === 機械與自動化工程學系 === 102 === The aim of this research is to study the formation of TSV (through silicon via) by picosecond laser. Wafer thickness is 100 um and laser engine is green series. Experimental works are focused on micro precision process to observe the effect of silicon wafer material after laser drill. Parameters used in this work are speed, path and power. The effect of thermal affected zone, recast. via diameter and aspect ratio have been observed. Preliminary results on laser drill demonstrate that a decrease in drilled via diameter and no residual remains in via would improve TSV formation technology. An improved laser TSV technology will contribute to 3D IC packaging in semiconductor industry in the near future. Secondary, the optimization on laser grooving on 45 nm low-k wafer is conducted. The material used in scribe line in 45nm wafer comprises metal (copper), low-k (ceramics) and silicon. Traditional diamond cutter would result in micro-cracking and chipping on silicon die. Newly developed process is applied laser grooving in the first and follows by a diamond cutting. A series of experimental works has been conducted on laser grooving and the results can then be applied to the wafer saw process.