Study of Electrochemical Device with Ta2O5 Protective Layer
碩士 === 正修科技大學 === 電機工程研究所 === 102 === The study adopts RF magnetron sputtering coating electrochromic tungsten oxide (WO3) and protective layer (Ta2O5) films on ITO/Glass substrate, and testing electrochemical stability in order to investigate the protective layer on the presence or absence of the p...
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ndltd-TW-102CSU009990212016-02-21T04:27:25Z http://ndltd.ncl.edu.tw/handle/82370566805648615223 Study of Electrochemical Device with Ta2O5 Protective Layer 以五氧化二鉭保護層應用於電致色變元件之研究 Chang, Juiyang 張瑞洋 碩士 正修科技大學 電機工程研究所 102 The study adopts RF magnetron sputtering coating electrochromic tungsten oxide (WO3) and protective layer (Ta2O5) films on ITO/Glass substrate, and testing electrochemical stability in order to investigate the protective layer on the presence or absence of the protective effect of electrochromic. Electrochromic cycling at different number of the device characteristics, and to investigate the light transmittance(ΔT%) of electrochromic devices(ECD), cyclic voltammetry and component life time of ECD. As shown in the study results, that the amorphous thin films can be obtained with the RF power of 60 W and oxygen concentration of 25% at room temperature (RT). The thicknesses of Ta2O5 films were approximately 70 nm, and can get a dielectric constant is 62.3, a dielectric loss is 0.28 (at 10 kHz). ECD in the coloring/bleaching voltage is ± 3.3 V, and the electric protective layer photochromic element after ion bombardment in 1000 times, the electrochromic layer retains a good films morphology and electrochromic properties, a transmittance variation (ΔT%) of 25% at a wavelength (λ) of 550 nm. This study is successfully by RF magnetron sputtering deposition of a protective layer Ta2O5 films. Our results demonstrated that the ECD exhibited the advantages of high life time, stability cyclic voltammetrys and good optical properties. Wang, Chihming 王志明 2014 學位論文 ; thesis 113 zh-TW |
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碩士 === 正修科技大學 === 電機工程研究所 === 102 === The study adopts RF magnetron sputtering coating electrochromic tungsten oxide (WO3) and protective layer (Ta2O5) films on ITO/Glass substrate, and testing electrochemical stability in order to investigate the protective layer on the presence or absence of the protective effect of electrochromic. Electrochromic cycling at different number of the device characteristics, and to investigate the light transmittance(ΔT%) of electrochromic devices(ECD), cyclic voltammetry and component life time of ECD.
As shown in the study results, that the amorphous thin films can be obtained with the RF power of 60 W and oxygen concentration of 25% at room temperature (RT). The thicknesses of Ta2O5 films were approximately 70 nm, and can get a dielectric constant is 62.3, a dielectric loss is 0.28 (at 10 kHz). ECD in the coloring/bleaching voltage is ± 3.3 V, and the electric protective layer photochromic element after ion bombardment in 1000 times, the electrochromic layer retains a good films morphology and electrochromic properties, a transmittance variation (ΔT%) of 25% at a wavelength (λ) of 550 nm.
This study is successfully by RF magnetron sputtering deposition of a protective layer Ta2O5 films. Our results demonstrated that the ECD exhibited the advantages of high life time, stability cyclic voltammetrys and good optical properties.
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author2 |
Wang, Chihming |
author_facet |
Wang, Chihming Chang, Juiyang 張瑞洋 |
author |
Chang, Juiyang 張瑞洋 |
spellingShingle |
Chang, Juiyang 張瑞洋 Study of Electrochemical Device with Ta2O5 Protective Layer |
author_sort |
Chang, Juiyang |
title |
Study of Electrochemical Device with Ta2O5 Protective Layer |
title_short |
Study of Electrochemical Device with Ta2O5 Protective Layer |
title_full |
Study of Electrochemical Device with Ta2O5 Protective Layer |
title_fullStr |
Study of Electrochemical Device with Ta2O5 Protective Layer |
title_full_unstemmed |
Study of Electrochemical Device with Ta2O5 Protective Layer |
title_sort |
study of electrochemical device with ta2o5 protective layer |
publishDate |
2014 |
url |
http://ndltd.ncl.edu.tw/handle/82370566805648615223 |
work_keys_str_mv |
AT changjuiyang studyofelectrochemicaldevicewithta2o5protectivelayer AT zhāngruìyáng studyofelectrochemicaldevicewithta2o5protectivelayer AT changjuiyang yǐwǔyǎnghuàèrtǎnbǎohùcéngyīngyòngyúdiànzhìsèbiànyuánjiànzhīyánjiū AT zhāngruìyáng yǐwǔyǎnghuàèrtǎnbǎohùcéngyīngyòngyúdiànzhìsèbiànyuánjiànzhīyánjiū |
_version_ |
1718193989568430080 |