Resistive Switching Characteristics in LaAlO3-based RRAM With Embedded Nickel Nanocrystals

碩士 === 中華大學 === 電機工程學系碩士班 === 102 === Recent years, the non-volatile memory had been accelerating booming. But also have disadvantages like high operating voltage, slow operating speed and low durability. Also in keep miniature the semiconductor component, it will make gate oxide thin film thinner r...

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Bibliographic Details
Main Authors: Hsu, Po-Ning, 徐伯寧
Other Authors: Hsieh, Ing-Jar
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/05308325811567967308