The Study of Ti-doped CeO2 Charge Trapping Layer Combined with Plasma Treatment in Nonvolatile Memory Application

• Main Authors: Wei Kung Sung, 宋為剛
• Other Authors: C. H. Kao
• Format: Others
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/69011071151784123235

碩士 === 長庚大學 === 電子工程學系 === 102 === The conventional floating gate memory had been replaced by the MOHOS-type memory. In this study, the Ti-doped CeO2 was used as trapping layer due to larger dielectric constant and smaller leakage current than the CeO2. Besides, the plasma treatment was applied on the Ti-doped CeO2 trapping layer, which can passivate the defects and enhance the characteristics of memory devices. At first, the CF4 plasma treatment was used in the Ce2Ti2O7 as trapping layer of memory device with. It can be seen that the memory device after CF4 plasma treatment shows a larger memory window, faster P/E speed and better data retention. Then, another NH3 plasma treatment under different time (1, 3, 6 min) was used in the CeO2 and Ce2Ti2O7 trapping layer, respectively. It‘s also seen that is clearly Ce2Ti2O7 trapping layer after NH3 plasma treatment for 3 min can obtain excellent memory characteristics. Finally, the physical and electrical characteristics of Ti-doped NiO2 films in MOHOS-type memory were studied. According to the result, the Ti-doped NiO2 films with proper 9000C annealing can show better performances including larger memory window, smaller charge loss and better endurance.