The Study of Ti-doped CeO2 Charge Trapping Layer Combined with Plasma Treatment in Nonvolatile Memory Application
碩士 === 長庚大學 === 電子工程學系 === 102 === The conventional floating gate memory had been replaced by the MOHOS-type memory. In this study, the Ti-doped CeO2 was used as trapping layer due to larger dielectric constant and smaller leakage current than the CeO2. Besides, the plasma treatment was applied on t...
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| Format: | Others |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69011071151784123235 |