| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 102 === Sb-based materials have demonstrated high potential for high-speed
logic and digital electronics due to their highest electron and hole
mobilities among compound semiconductors. In order to achieve high
electron mobility field-effect transistors at high frequency and high power
demand aspects of the transmission characteristics of low power
consumption with high electron (hole) mobility is required, has been the
academic attention. We use a high work function material iridium as a
gate transistors extremely metal, hoping to improve the traditional GaAs
gate at the high or low temperature instability, as after the process
transistors found in the use of iridium, the process the transistor has the
best characteristics, minimum noise and best thermal stability. Although
antimony compounds has the highest electron (hole) mobility, but
because of antimony compounds itself easily oxidized, and prone to
defect centers at the surface will influence the device characteristics,
After the discovery process transistor gate made of iridium metal
components are more stable and better features, presumably caused by
high temperature titanium metal is not fire-resistant components in terms
of the difference compared with iridium. Finally, the use of iridium in the
InAs/AlSb on silicon substrate, Due to silicon substrate of an integrated
GaAs substrates in comparison to the good and the silicon substrate with
respect to the GaAs substrate inexpensive, compared to the mass
production after the economic advantages. So the process steady
InAs/AlSb on silicon substrate transistor is the trend of the world.
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