Device Characterization of Antimonide Based HEMTs with Refractory Schottky Gate Metal Design
碩士 === 長庚大學 === 電子工程學系 === 102 === Sb-based materials have demonstrated high potential for high-speed logic and digital electronics due to their highest electron and hole mobilities among compound semiconductors. In order to achieve high electron mobility field-effect transistors at high frequency a...
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| Format: | Others |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68621622737540876776 |