Effects of antimony dopants on optical and electrical properties of InGaP PN junction
碩士 === 長庚大學 === 光電工程研究所 === 102 === In this paper ,it is different flow ratio (Sb/V=0, 3.25E-4, 6.5E-4, 13E-4) of antimony-doped gallium indium phosphide were grown on GaAs substrate by metal organic chemical vapor deposition (MOCVD) to research properties of GaInP. The experiments focused on optic...
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| Format: | Others |
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2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76530864349203657664 |