The influence of Mo:Ta in TFT etching process

碩士 === 元智大學 === 光電工程學系 === 101 === For replacing the Cr by using Mo:Ta, in addition to the sheet resistance of Cr lower than Mo:Ta, the resistance also higher than Mo:Ta. For expending understand the electric characteristic of panel, we have to discuss about Mo:Ta in depth. After research, we can im...

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Bibliographic Details
Main Authors: Chung-Nan hsu, 徐忠楠
Other Authors: Chung-Pin Liu
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/71314695029665671929
Description
Summary:碩士 === 元智大學 === 光電工程學系 === 101 === For replacing the Cr by using Mo:Ta, in addition to the sheet resistance of Cr lower than Mo:Ta, the resistance also higher than Mo:Ta. For expending understand the electric characteristic of panel, we have to discuss about Mo:Ta in depth. After research, we can improvement the over etching by using two step etching, and optimize the process parameter by using taguzi experiment plan. Finally, the resistance and circuit value are better than Cr, and for green conception, also decrease the hazard by Cr6+ from Cr.