Performance Analysis of a Novel 1200V Vertical IGBT device Structure
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 101 === The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current dens...
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| Format: | Others |
| Language: | en_US |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46257111420997987385 |