The Study of AlGaN/GaN Two-Dimensional Heterojunction Structures
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所在職專班 === 101 === In this dissertation, we discuss the material characteristics of AlGaN/GaN high electron mobility transistor (HEMT) structures. All samples were prepared by a vertical-type metalorganic chemical vapor deposition system and examined by high resolutio...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/pp8cxs |