Research on GaN-based vertical cavity surface emitting diodes with diffusion-defined confinement structure
碩士 === 國立臺灣科技大學 === 電子工程系 === 101 === Following the study of the current blocking layer (CBL) of GaN-based light emitting diodes (LED) that senior colleague did, in this thesis, we further studied the related diffusion theory and determined its coefficients experimentally. Using rapid thermal anneal...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52070339252357806288 |