Simultaneous EUV Flare- and CMP-Aware Placement
碩士 === 國立臺灣大學 === 電子工程學研究所 === 101 === Extreme Ultraviolet Lithography (EUVL) is one of the most promising lithography technologies for next generation, but EUVL suffers from the flare effects (i.e., scattered light) which cause critical dimension (CD) distortion and damage CD uniformity. Moreover,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30591234511581060691 |