Fabrication and Characterization of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Field Effect Transistors
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === This work is focused on the effects of the photoelectrochemical oxidation (PEC oxidation) method on both AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) and gate recessed AlGaN/GaN MOS-HEMTs. The measurement of AlGaN/G...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32703899899615611454 |