Oxide Semiconductor Light Emitting Diode Fabrication by the Atomic Layer Deposition Method

• Main Authors: Yao-Te Wang, 王耀德
• Other Authors: Lung-Han Peng
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/17898722594722438450

碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === In this thesis, we present the fabrication and characterization of ZnO/GaN and ZnO/Si light-emitting diode (LED) using self-assembled nanosphere lithography and atomic layer deposition (ALD). First, we discuss the theory and process of self-assemble nanosphere lithography, and present the theory of ALD system followed by material analysis. Second, we fabricate and measure the ZnO/GaN LED devices. Third part, we fabricate and measure the ZnO/Si LED devices. From the PL analysis pumped by a 266nm Nd:YAG solid-state laser, we observed a peak emission wavelength at 383nm with a full width at half maximum (FWHM) of 25nm. Data from the XRD analysis suggest the ZnO film grown by the ALD system to be poly crystalline. For fabricated the ZnO/GaN LED devices from the current-voltage and the electroluminescence (EL) data, these devices exhibit non-ideal electrical characteristic. The devices emit ultraviolet and visible light under both forwarded and reversed bias, respectively. For the ZnO/Si LED devices, they exhibit current rectification characterization and have a turn-on voltage of 6V and the devices emit continuous visible light under forward bias. In addition, we fabricated planar type for ZnO LED on (001) and (111) P-Si substrates. We detect five-fold increase in the emission intensity for a 6nm-thick ZnO/Si LED compared with a 3nm-thick ZnO/Si LED.