Analysis of effect of EUV on Ge MOSFET and IGZO TFT and Modeling of Through Silicon Vias
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === First part of this thesis is investigating the effect of Extreme Ultra Violet (EUV) on high performance Ge MOSFETs for the following considering devices which will be fabricated by Extreme Ultra Violet Lithography (EUVL). The main degradations of MOSFETs are fi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84796904918116435964 |