Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge

碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === The mobility is important to the MOSFET devices since it is directly proportional to the on current. In this thesis, we use MATLAB to coding the mobility simulation. The high-k material gate oxide reduces the mobility of device because of remote phonon scatteri...

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Main Authors:	Yi-Jen Tseng, 曾怡仁
Other Authors:	劉致為
Format:	Others
Language:	en_US
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/19911037997164124946

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spelling	ndltd-TW-101NTU051240342015-10-13T23:05:29Z http://ndltd.ncl.edu.tw/handle/19911037997164124946 Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge 遠程聲子及矽鍺三閘極鰭式電晶體及環繞式閘極電晶體電子遷移率理論模型研究 Yi-Jen Tseng 曾怡仁碩士國立臺灣大學光電工程學研究所 101 The mobility is important to the MOSFET devices since it is directly proportional to the on current. In this thesis, we use MATLAB to coding the mobility simulation. The high-k material gate oxide reduces the mobility of device because of remote phonon scattering. We modify the remote phonon theoretical model in nMOSFET and contrary the simulate data and experimental data. For 3D devices, i.e. FinFET, or GAA FET(gate all around), mobility simulation, first we construct two dimensional the Schrodinger-Poisson solver. Next we derive the nanowires formula, coding the two dimensional electrical-quantum confinement scattering mechanism, and contrary the mobility simulation result to the one dimensional electrical-quantum mobility simulation in Si & Ge. 劉致為 2013 學位論文 ; thesis 77 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === The mobility is important to the MOSFET devices since it is directly proportional to the on current. In this thesis, we use MATLAB to coding the mobility simulation. The high-k material gate oxide reduces the mobility of device because of remote phonon scattering. We modify the remote phonon theoretical model in nMOSFET and contrary the simulate data and experimental data. For 3D devices, i.e. FinFET, or GAA FET(gate all around), mobility simulation, first we construct two dimensional the Schrodinger-Poisson solver. Next we derive the nanowires formula, coding the two dimensional electrical-quantum confinement scattering mechanism, and contrary the mobility simulation result to the one dimensional electrical-quantum mobility simulation in Si & Ge.
author2	劉致為
author_facet	劉致為 Yi-Jen Tseng 曾怡仁
author	Yi-Jen Tseng 曾怡仁
spellingShingle	Yi-Jen Tseng 曾怡仁 Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge
author_sort	Yi-Jen Tseng
title	Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge
title_short	Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge
title_full	Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge
title_fullStr	Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge
title_full_unstemmed	Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge
title_sort	remote phonon scattering theoretical model of nmosfet and mobility modeling of tri-gate and gaa transistor of si&ge
publishDate	2013
url	http://ndltd.ncl.edu.tw/handle/19911037997164124946
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Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge

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