Remote Phonon Scattering Theoretical Model of nMOSFET and Mobility Modeling of Tri-gate and GAA Transistor of Si&Ge
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === The mobility is important to the MOSFET devices since it is directly proportional to the on current. In this thesis, we use MATLAB to coding the mobility simulation. The high-k material gate oxide reduces the mobility of device because of remote phonon scatteri...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19911037997164124946 |