| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === The mobility is important to the MOSFET devices since it is directly proportional to the on current. In this thesis, we use MATLAB to coding the mobility simulation. The high-k material gate oxide reduces the mobility of device because of remote phonon scattering. We modify the remote phonon theoretical model in nMOSFET and contrary the simulate data and experimental data. For 3D devices, i.e. FinFET, or GAA FET(gate all around), mobility simulation, first we construct two dimensional the Schrodinger-Poisson solver. Next we derive the nanowires formula, coding the two dimensional electrical-quantum confinement scattering mechanism, and contrary the mobility simulation result to the one dimensional electrical-quantum mobility simulation in Si & Ge.
|
|---|
