Analysis of Stress and Electrical Characteristics of FinFETs with Edge Dislocation Stressors
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === Dislocation stressors in the source and drain build the tensile stress field in the channel of NMOSFET. An analytic model of the strain/stress field induced by the edge dislocation is presented. The model is used for stress optimization of the dislocation stres...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/64484497817316115606 |