Growth mechanism and strain evolution of GaN on various patterned sapphire substrates
博士 === 國立臺灣大學 === 光電工程學研究所 === 101 === In this dissertation, the growth mechanisms and strain evolution of gallium nitride (GaN) layers grown on various sapphire substrates are studied. The intrinsic strain during GaN growth is controlled by adjusting the growth parameters (temperature, pressure, an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87895279254952103164 |