High Breakdown Voltage in AlGaN/GaN HEMTs by Using AlGaN/GaN/AlGaN Quantum-Well Electron-Blocking-Layer for Power-Switching Applications
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 101 === GaN-based high-electron-mobility transistors (HEMTs) are considered to be excellent candidate due to their high sheet-carrier density in the 2-D electron gas (2-DEG) channel and large breakdown field strength (~3.5MV/cm). In this work , we numerically...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39865454238275102167 |