Characterization of Ge MOSFETs with Various Interfacial Layer Processes by Charge Pumping Technique

Characterization of Ge MOSFETs with Various Interfacial Layer Processes by Charge Pumping Technique

碩士 === 國立清華大學 === 工程與系統科學系 === 101

Bibliographic Details
Main Authors:	CHEN, SHENG-KAI, 陳聖楷
Other Authors:	Chang-Liao, Kuei-Shu
Format:	Others
Language:	zh-TW
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/92568006893996535988

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